For citations:
Vasiliev Yu.B., Verezub N.A., Mezhenniy M.V., Prosolovitch V.S., Prostomolotov A.I., Reznik V.Ya. PECULIARITIES OF A DEFECT GENERATION DURING A HEAT TREATMENT OF LARGE DIAMETER DISLOCATION−FREE SILICON WAFERS WITH SPECIFIED DISTRIBUTION OF OXYGEN−CONTAINING GETTERING CENTRES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(2):43-50. (In Russ.) https://doi.org/10.17073/1609-3577-2012-2-43-50
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