For citations:

Abgaryan K.K., Volodina O.V., Uvarov S.I. Mathematical Modeling of Point Defect Cluster Formation in Silicon Based on Molecular Dynamic Approach. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(1):37-42. (In Russ.) https://doi.org/10.17073/1609-3577-2015-1-37-42