For citations:
Tynyshtykbayev K.B., Ryabikin Y.A., Tokmoldin S.Z., Rakymetov B.A., Aytmukan T., Abdullin H.A. BOUNDARY PROCESSES IN ELECTROLYTE — SILICON INTERFACE AREA DURING SELF–ORGANIZATION OF MOSAIC STRUCTURE OF 3D–ISLANDS OF POROUS SILICON NANOCRYSTALLITES AT LONG–TERM ANODE ETCHING OF P–SI (100) IN ELECTROLYTE WITH AN INTERNAL SOURCE OF CURRENT. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(1):31-36. (In Russ.) https://doi.org/10.17073/1609-3577-2014-1-31-36
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