Directional Crystallization of Multicrystalline Silicon in a Weak Melt Convection and Gas Exchange
https://doi.org/10.17073/1609-3577-2015-2-95-102
Abstract
For the first time silicon was grown by means of directional crystallization and using the submerged into the melt heater multi−crystalline. To study interaction of the heater casing material with molten silicon we used the model of the heater in the form of a graphite plate coated with a protective layer of SiC of the special structure. During the crystallization, the plate was on the melt surface and almost completely overlaid the surface of the melt, thereby significantly reducing the intensity of gas exchange between the melt and the atmosphere in the furnace. The absence of a free surface of the melt resulted in the absence of Marangoni convection, and the crystal grew under the conditions of reduced melt convection, especially at the final stages of crystallization, when the thickness of the melt layer was much less than the cross size of the crucible. The crystal structure has a strongly pronounced columnar structure; measured data on resistivity varies over the ingot height from 1 to 1.3 Ω⋅cm, and the lifetime of minority carriers is about 3.7 µs. FTIR studies of a carbon content showed the longitudinal distribution to fundamentally differ from the linear dependence typical for the method of directional crystallization.
About the Author
M. A. Gonik
Centre for Material Researches «Photon»
Russian Federation
Russian Federation
Cand. Sci. (Eng.), Director,
10 Cheska Lipa Str., Aleksandrov, Vladimir Region 601655
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Review
For citations:
Gonik M.A. Directional Crystallization of Multicrystalline Silicon in a Weak Melt Convection and Gas Exchange. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(2):95-102. (In Russ.) https://doi.org/10.17073/1609-3577-2015-2-95-102
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