The Method for Determination of Nondestructive Conditions of Laser Annealing of Dielectric and Semiconductor Plates
https://doi.org/10.17073/1609-3577-2015-2-127-132
Abstract
One−sided heating of plate with a free surface with continuous laser emission has been examined within the framework of quasistatic unbound problem of thermoelasticity. The method for determination of nondestructive conditions of laser annealing of dielectric and semiconductor plates has been validated. This relationship allows one to generate nondestructive conditions of laser processing. The calculation model has been obtained in the assumption of the independence of thermal, mechanical and optical properties of materials on temperature. We show that for a number of dielectric and semiconductor materials there is a region of change of the dimensionless parameter τ, in fracture of plates of these materials during laser annealing may occur due to thermoelastic stresses. Experimental verification of the adequacy of the calculation model has been made for the example of LK3 optical glass which showed quite a satisfactory agreement between the calculated and experimental data.
About the Authors
A. F. Kovalenko
All−Russia Research Institute of Automatics
Russian Federation
Russian Federation
Dr. Sci. (Eng.), Head of the Research Laboratory, Professor,
22 Suschchevsraya Str., Moscow 127055
A. A. Vorobiev
Peter the Great Strategic Missile Forces Military Academy
Russian Federation
Russian Federation
Cand. Sci. (Eng.), Head of the Research Laboratory,
9/5 Kitaygorodsky proezd, Moscow 103074
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Review
For citations:
Kovalenko A.F., Vorobiev A.A. The Method for Determination of Nondestructive Conditions of Laser Annealing of Dielectric and Semiconductor Plates. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(2):127-132. (In Russ.) https://doi.org/10.17073/1609-3577-2015-2-127-132
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