For citations:

Seidman L.A. FORMATION OF THREE−DIMENSIONAL STRUCTURES IN SILICON CARBIDE SUBSTRATES BY PLASMOCHEMISTRY ETCHING. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(3):157-171. (In Russ.) https://doi.org/10.17073/1609-3577-2015-3-157-171