For citations:

Lozovsky V.N., Lunin L.S., Seredin B.M. FEATURES OF SILICON DOPING BY THE THERMOMIGRATION METHOD. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(3):179-188. (In Russ.) https://doi.org/10.17073/1609-3577-2015-3-179-188