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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Kobeleva S.P., Anfimov I.M., Turutin A.V., Yurchuk S.Yu., Fomin V.M. Analysis of diffusion profiles of phosphorus in gallium-doped germanium using method of coordinate-dependent diffusion. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2018;21(2):122-128. (In Russ.) https://doi.org/10.17073/1609-3577-2018-2-122-128



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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

National University of Science and Technology “MISIS”
4 Leninsky Prospect, Moscow, 119049 Russia
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