For citations:

Shul’pina I.L., Kozlov V.A. X-RAY TOPOGRAPHIC STUDY OF DEFECTS IN SI-BASED MULTILAYER EPITAXIAL POWER DEVICES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(1):28-34. (In Russ.) https://doi.org/10.17073/1609-3577-2013-1-28-34