Preview

User

Not a user? Register with this site Forgot your password?

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Advanced search
Fullscreen

For citations:

Enisherlova K.L., Temper E.M., Kolkovsky Yu.V., Medvedev B.K., Kapilin S.A. ALD Al2O3, SiNx, and SiON films as passivating coatings in AlGaN/GaN HEMT. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2019;22(3):202-211. (In Russ.) https://doi.org/10.17073/1609-3577-2019-3-202-211



Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

National University of Science and Technology “MISIS”
4 Leninsky Prospect, Moscow, 119049 Russia
Phone/fax: +7 (495) 638-45-31
Email: met.misis@inbox.ru

Processing of personal data
supported by NEICON (Elpub lab)