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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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Mordkovich V.N., Abgaryan K.K., Reviznikov D.L., Leonov A.V. Simulation of Hall field elements based on nanoscale silicon-on-insulator heterostructures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2020;23(2):109-115. (In Russ.) https://doi.org/10.17073/1609-3577-2020-2-109-115



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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)