For citations:
Mordkovich V.N., Abgaryan K.K., Reviznikov D.L., Leonov A.V. Simulation of Hall field elements based on nanoscale silicon-on-insulator heterostructures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2020;23(2):109-115. (In Russ.) https://doi.org/10.17073/1609-3577-2020-2-109-115