Quantum efficiency simulation of InGaN/Si LED
https://doi.org/10.17073/1609-3577-2012-3-50-53
Abstract
In this paper we investigated the effect of reducing the LED quantum efficiency at increasing the current density. Reasons influencing this effect are determined. We show methods to reduce this effect and the positive results of using the silicon substrates in nanoheterostructures for light−emitting diodes.
About the Authors
O. I. Rabinovich
National University of Science and Technology MISiS
Russian Federation
Russian Federation
V. P. Sushkov
National University of Science and Technology MISiS
Russian Federation
Russian Federation
References
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Review
For citations:
Rabinovich O.I., Sushkov V.P. Quantum efficiency simulation of InGaN/Si LED. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(3):50-53. (In Russ.) https://doi.org/10.17073/1609-3577-2012-3-50-53
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