For citations:
Leonov A.V., Murashev V.N., Ivanov D.N., Kirilov V.D. Charge-coupling effect in a Hall field element based on thin-film SOI-MOS transistor. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(1):57-62. (In Russ.) https://doi.org/10.17073/1609-3577-2021-1-57-62
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