For citations:

Enisherlova K.L., Goriachev V.G., Temper E.M., Kapilin S.A. INFLUENCE OF SILICON LAYER PROPERTIES ON CAPACITANCE PARAMETERS OF MIS/SOS-STRUCTURES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(1):53-60. (In Russ.) https://doi.org/10.17073/1609-3577-2013-1-53-60