For citations:
Pescherova S.M., Pavlova L.A., Nepomnyaschikh A.I., Eliseev I.A., Sokolnikova Yu.V. Specific Features of Microinclusion Formation in Multisilicon Crystals Grown from Refined Metallurgical Silicon by the Bridgman–Stockbarger Method. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):12-17. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-12-17
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