Application of Al2O3 film for stabilization of charge properties of the SiO2/p-Si interface

A. S. Kim; N. A. Serko; P. E. Khakuashev; A. N. Kolky; S. Yu. Yurchuk

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Kim A.S., Serko N.A., Khakuashev P.E., Kolky A.N., Yurchuk S.Yu. Application of Al2O3 film for stabilization of charge properties of the SiO2/p-Si interface. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(2):148-156. (In Russ.) https://doi.org/10.17073/1609-3577-2023-2-148-156. EDN: OPHQIG

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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