For citations:
Belov A.G., Kanevskii V.E., Kladova E.I., Knyazev S.N., Komarovskiy N.Yu., Parfent’eva I.B., Chernyshova E.V. Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(3):171-180. (In Russ.) https://doi.org/10.17073/1609-3577j.met202304.525