Preview

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Advanced search
Fullscreen

For citations:


Belov A.G., Kanevskii V.E., Kladova E.I., Knyazev S.N., Komarovskiy N.Yu., Parfent’eva I.B., Chernyshova E.V. Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(3):171-180. (In Russ.) https://doi.org/10.17073/1609-3577j.met202304.525



Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)