Influence of Ge Ion Implantation into Silicon Dioxide/Silicon Structure on Charge Accumulation under Low–Energy Stationary Radiation
https://doi.org/10.17073/1609-3577-2012-4-3-8
Abstract
Results on the influence of Ge ion implantation into pyrogenic SiO2 on radiation charge accumulation are presented. Ge embedding in the silicon dioxide/ silicon system has been analyzed theoretically. We show that Ge ion embedding in the stoichiometric silicon dioxide at the silicon dioxide/ silicon interface or forming Ge nanoclusters in the SiO2 bulk provide an energetic advantage.
About the Authors
O. P. Guskova
Federal State –owned Unitary Enterprize «Federal Science and Production Center Measuring
Systems Research Institute named after Yu. Ye. Sedakov»
Russian Federation
Russian Federation
V. M. Vorotynthev
Nizhny Novgorod, State technical University named after R.E. Alekseev
Russian Federation
Russian Federation
E. L. Shobolov
Federal State –owned Unitary Enterprize «Federal Science and Production Center Measuring
Systems Research Institute named after Yu. Ye. Sedakov»
Russian Federation
Russian Federation
N. D. Abrosimova
Federal State –owned Unitary Enterprize «Federal Science and Production Center Measuring
Systems Research Institute named after Yu. Ye. Sedakov»
Russian Federation
Russian Federation
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Review
For citations:
Guskova O.P., Vorotynthev V.M., Shobolov E.L., Abrosimova N.D. Influence of Ge Ion Implantation into Silicon Dioxide/Silicon Structure on Charge Accumulation under Low–Energy Stationary Radiation. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):28-32. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-3-8
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