For citations:
Legotin S.A., Yurchuk S.Yu., Murashev V.N., Konovalov M.P., Tapero K.I., Sidelev A.V., Sideleva E.P., Khrushchev N.S. Modeling the characteristics of gamma detectors based on silicon p–i–n structures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2024;27(3):232-244. (In Russ.) https://doi.org/10.17073/1609-3577j.met202405.591
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