For citations:
Loshkarev I.D., Vasilenko A.P., Trukhanov E.M., Kolesnikov A.V., Ilin A.S., Putyato M.A., Semyagyn B.R., Preobrazhensky V.V. EFFECTS OF THE FORMATION METHOD OF EARLY GAP BUFFER MONOLAYERS ON THE STRAIN STATE OF GAAS FILMS ON VICINAL SI(001) SUBSTRATES. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(4):48-51. (In Russ.) https://doi.org/10.17073/1609-3577-2013-4-48-51
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