The fundamental problems of the modern state of the studies of organic-inorganic organo-halide perovskites (OHP) as basis for high efficiency thin film solar cells are discussed. Perovskite varieties and background properties are introduced. The chronology of development of the studies in this direction has been presented — structural aspects of these OHP perovskites, from early 2D to recent 3D MAPbI3 perovskites and important technological aspects of smooth thin film structure creation by various techniques, such as solvent engineering, spin- and dip-coating, vacuum deposition, cation exchange approach, nanoimprinting (particularly, a many-sided role of polymers). The most important theoretical problems such as electronic structure of lattice, impurity and defect states in pure and mixed perovskites, suppressed electron-hole recombination, extra-long lifetimes, and diffusion lengths are analyzed. Degradation effects associated with moisture and photo irradiation, as well as degradation of metallic electrodes to OHP solar cells have been considered. The application of carbon nanostructures: carbon nanotubes (CNT) and graphene as stable semitransparent charge collectors to OHP perovskites is demonstrated on the example of original results of authors.

In the frame of permanent objective to increase solar cell efficiency and to decrease production cost the monolike ingot process was designed which combine multicrystalline (mc) productivity and monocrystalline structure performances. As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent), Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease. SoG silicon using would be developed all the more fast since it enables to produce high efficiency solar cells. It is why the monolike process have been tested and optimized for Kazakhstan mc-SoG silicon. The objective of this work was study of the higher level content impurities influences on the crystal defect generation (mainly dislocations) of the monocrystalline structure. Visual monocrystalline structure, minority carrier lifetime mapping, and photoluminescence techniques were used to study the monolike ingots obtained from Kazakhstan’s mc-SoG silicon.

The films of carbon-polymer nanocomposite PAN/SWCNT with different filler concentrations, varying from 0.5 to 30 wt.%, are synthesized. It found that the use of fillers in the polymer composite on the basis of PAN, in the form of SWNTs, significantly affects the mechanical properties of the polymer, in particular, the tensile strength increases. The study of electrophysical properties showed that when SWNT fillers are introduced from 0.5 to 30 wt.%, the electrical conductivity increases by 2 orders of magnitude due to the increase in the percolation degree and by 7 orders of magnitude in comparison with pure PAN. The dielectric constant and reflectance (R), transmission (T), absorption (A) in the terahertz range are measured. It found that the reflection coefficient is nonlinearly dependent on the concentration of carbon nanotubes, and the minimum reflection coefficient is 0.55 a.u. is observed at a concentration of 0.5 wt.%, while materials with a SWNT concentration of more than 5 wt.% show almost identical reflection coefficient at a sufficiently low transmission factor.

The rapid development of electronics leads to the creation and use of electronic components of small dimensions, including nanoelements of complex, layered structure. The search for effective methods for cooling electronic systems dictates the need for the development of methods for the numerical analysis of heat transfer in nanostructures. A characteristic feature of energy transfer in such systems is the dominant role of contact thermal resistance at interlayer interfaces. Since the contact resistance depends on a number of factors associated with the technology of heterostructures manufacturing, it is of great importance to determine the corresponding coefficients from the results of temperature measurements.
The purpose of this paper is to evaluate the possibility of reconstructing the thermal resistance coefficients at the interfaces between layers by solving the inverse problem of heat transfer.
The complex of algorithms includes two major blocks — a block for solving the direct heat transfer problem in a layered nanostructure and an optimization block for solving the inverse problem. The direct problem was formulated in an algebraic (finite difference) form under the assumption of a constant temperature within each layer, which is due to the small thickness of the layers. The inverse problem was solved in the extreme formulation, the optimization was carried out using zero-order methods that do not require the calculation of the derivatives of the optimized function. As a basic optimization algorithm, the Nelder—Mead method was used in combination with random restarts to search for a global minimum.
The results of the identification of the contact thermal resistance coefficients obtained in the framework of a quasi-real experiment are presented. The accuracy of the identification problem solution is estimated as a function of the number of layers in the heterostructure and the «measurements» error.
The obtained results are planned to be used in the new technique of multiscale modeling of thermal regimes of the electronic component base of the microwave range, when identifying the coefficients of thermal conductivity of heterostructure.

In this work the crystal structure and texture of isotropic and anisotropic polycrystalline hexagonal ferrites BaFe₁₂O₁₉ obtained by the method of radiation-thermal sintering was studied using X-ray diffraction and X-ray phase analysis. Crude blanks of both isotropic and anisotropic hexaferrites were obtained by the standard method of ceramic technology from one raw material (Fe₂O₃ and BaCO₃ of the “analytical grade” brand) and on the same equipment with the only difference that the pressing of anisotropic blanks was carried out in magnetic field H = 10 kOe. For sintering raw billets a linear electron accelerator ILU-6 (electron energy E_e = 2.5 MeV) INP them. G.I. Budker SB RAS was used. Samples were sintered in air for one hour at 1200 °C, 1250 °C, 1300 °C, and 1350 °C.
It is shown for the first time that using the RTS technology, using raw blanks from ferritized charge, could be obtained high-quality single-phase isotropic and anisotropic hexaferrites BaFe₁₂O₁₉. The data on the features of the crystal structure and texture of the obtained objects of research are given.
It was first shown that for polycrystalline hexagonal barium ferrites of type M, the dependence of the «pref.orient.o1» predominant orientation of the crystal texture parameter on the degree of magnetic texture f is described by the expression “pref.orient.o1” = –0.005f + 0.6886.