In₂O₃:Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The solid solution ((In_1-xEr_x)₂O₃) is formed here. The 1.534 mkm erbium electroluminescence is observed by the forward current through the investigated hetero-structure: substrate-n-Si\In₂O₃:Er-film\ITO-contact. The Er excitation model by the electron-hole recombination is proposed. The model consist of the electrons at the indium oxide conduction band. And the hole current is through the channel at the middle of the In₂O₃:Er band gap. The hole channel is formed by the defect state density spreading from the valence band edge into the band gap. Therefore the electron-hole recombination energy is lower then the indium oxide band gap and equals to the 1.56 eV. Then the electron-hole recombination excites in resonance the third excited state of Er^{3+ 4}I_9/2 (1.53 эВ). Then the non-radiative relaxation to the first excited state ⁴I_13/2 (0.81 эВ) occurs. And finally the 1.534 mkm radiative emission into ground state ⁴I_15/2 occurs.

Aluminum and its alloys are one of the most used materials in the production of technical products: from electrical wires to aircraft. The development of new aluminum alloys and the constant expansion of the field of their application leads to the need to develop a unified approach to the theoretical description of the physical properties of systems with a different number of components and to determine the influence of metals on the characteristics of the alloy. For the study of thermal behavior of aluminum alloys, binary systems are the most suitable due to the small variability of their compositions. Such alloys are, in particular, antifriction self-lubricating two-component alloys of Al-Sn and Al-Zn systems. In addition, due to the existence of the effect of inheritance by the alloy of a number of characteristic features of components, there is a need to calculate the thermophysical properties of Al, Sn and Zn. In this connection, we approximated the experimental data arrays on the temperature dependences of thermal-physical properties of Al, Sn and Zn using the functions obtained within the framework of the author's quasi-two-phase model of the local-equilibrium region. The features on the obtained graphs in the form of finite jumps, peaks and pits with rounded tops are associated with structural transformations or phase transitions. It is suggested that in the temperature range of 100-200 K there are pits in the temperature dependences of thermal conductivities of aluminum and zinc formed due to structural transformations in these metals or due to the occurrence of structural inhomogeneity in them during crystallization. Predictive estimates of heat capacities of Al₆₀Sn₄₀ and Al₉₅Zn₅ alloys obtained using the mixing rule (in chemistry ‒ the rule of obtaining a compound of a given composition) have been carried out.