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Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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For citations:

Komkov O.S., Firsov D.D., Kovalishina E.A., Petrov A.S. Determination of Indium Arsenide Autoepitaxial Layer Thickness by Fourier–Transform Infrared Spectroscopy. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(3):194-198. (In Russ.) https://doi.org/10.17073/1609-3577-2014-3-194-198



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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

National University of Science and Technology “MISIS”
4 Leninsky Prospect, Moscow, 119049 Russia
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