For citations:
Poklonski N.A., Gorbachuk N.I., Shpakovski S.V., Philipenya V.A., Turtsevich A.S., Shvedov S.V., Vo Q., Nguyen T., Skuratov V.A., Andreas D. DLTS SPECTRA OF SILICON DIODES WITH P+—N–JUNCTION IRRADIATED WITH HIGH ENERGY KRYPTON IONS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(1):42-46. (In Russ.) https://doi.org/10.17073/1609-3577-2014-1-42-46
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