Preview

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Advanced search
Fullscreen

For citations:


Ilin A.S., Gololobov V.M., Forsh E.A., Forsh P.A., Kashkarov P.K. Calculation of the grain potential barrier in the poly− and nanocrystalline semiconductors. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2017;20(2):122-128. (In Russ.) https://doi.org/10.17073/1609-3577-2017-2-122-128



Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)