For citations:

Enisherlova K.L., Medvedev B.K., Temper E.M., Korneev V.I. Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2018;21(3):182-193. (In Russ.) https://doi.org/10.17073/1609-3577-2018-3-182-193