Nature of the abnormally high photocurrent relaxation time in the a-Ga2O3-based Schottky diodes | Schemerov | Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhnikii

ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

eng | рус

Preview

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

Advanced search

Archives

Download this PDF file

For citations:

Schemerov I.V., Polyakov A.Yu., Almaev A.V., Nikolaev V.I., Kobeleva S.P., Vasilyev A.A., Kirilov V.D., Kochkova A.I., Kopiev V.V., Kulanchikov Yu.O. Nature of the abnormally high photocurrent relaxation time in the a-Ga2O3-based Schottky diodes. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(2):137-147. (In Russ.) https://doi.org/10.17073/1609-3577-2023-2-137-147. EDN: BSJNQA

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)

Editor-in-Chief

Yuri N. Parkhomenko

* not an advertisement

Indexing Databases

* not an advertisement

Article Tools

Finding References

Email this article (Login required)

Email the author (Login required)

About the Authors

I. V. Schemerov
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Ivan V. Schemerov — Cand. Sci. (Eng.), Associate Professor

A. Yu. Polyakov
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Alexander Yu. Polyakov — Cand. Sci. (Eng.), Professor

A. V. Almaev
Tomsk State University
Russian Federation

36 Lenin Ave., Tomsk 634050

Aleksey V. Almaev — Cand. Sci. (Eng.), Associate Professor

V. I. Nikolaev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Russian Federation

26 Politehnicheskaya Str., St. Petersburg 194021

Vladimir I. Nikolaev — Dr. Sci. (Phys.-Math.), Head of Department

S. P. Kobeleva
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Svetlata P. Kobeleva — Cand. Sci. (Phys.-Math.), Associate Professor

A. A. Vasilyev
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Anton A. Vasilyev — Postgraduate Student

V. D. Kirilov
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Viktor D. Kirilov — Postgraduate Student

A. I. Kochkova
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Anastasia I. Kochkova — Engineer

V. V. Kopiev
Tomsk State University
Russian Federation

36 Lenin Ave., Tomsk 634050

Viktor V. Kopiev — Engineer

Yu. O. Kulanchikov
National University of Science and Technology “MISIS”
Russian Federation

4-1 Leninsky Ave., Moscow 119049

Yuri O. Kulanchikov — Postgraduate Student

Notifications