For citations:
Feklistov K.V., Lemzyakov A.G., Shklyaev A.A., Protasov D.Yu., Deryabin A.S., Spesivsev E.V., Gulyaev D.V., Pugachev A.M., Esaev D.G. The barriers for electron and hole injection from Si substrate into the RF magnetron-deposited In2O3 : Er films. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(3):234-247. (In Russ.) https://doi.org/10.17073/1609-3577j.met202305.529
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