For citations:

Gonik M.A., Cröll A. POSSIBILITY OF GROWING BULK SI—GE CRYSTALS USING AXIAL HEAT FLOW METHOD NEAR THE CRYSTALLIZATION FRONT. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(3):12-19. (In Russ.) https://doi.org/10.17073/1609-3577-2013-3-12-19