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| Issue |
Title |
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| Vol 18, No 1 (2015) |
Nitride HEMTs VS Arsenides: the Ultimate Battle? |
Abstract
PDF (Rus)
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Yu. V. Fedorov, S. V. Mikhaylovich |
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| Vol 18, No 1 (2015) |
Influence of the ab initio Calculation Parameters on Prediction of Energy of Point Defects in Silicon |
Abstract
PDF (Rus)
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M. G. Ganchenkova, I. A. Supriadkina, K. K. Abgaryan, D. I. Bazhanov, I. V. Mutigullin, V. A. Borodin |
| |
| Vol 18, No 1 (2015) |
Remote and Conjugated Modeling of Heat–Mass Transfer and Defect Formation in Technological Processes |
Abstract
PDF (Rus)
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A. I. Prostomolotov, N. A. Verezub, Kh. Kh. Ilyasov |
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| Vol 18, No 1 (2015) |
Mathematical Modeling of Point Defect Cluster Formation in Silicon Based on Molecular Dynamic Approach |
Abstract
PDF (Rus)
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K. K. Abgaryan, O. V. Volodina, S. I. Uvarov |
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| Vol 18, No 1 (2015) |
Study of Optimization Options for Second Generation Solar Cell Materials by Multilevel Modeling |
Abstract
PDF (Rus)
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D. N. Krasikov, A. A. Knizhnik, A. V. Gavrikov, B. V. Potapkin |
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| Vol 18, No 1 (2015) |
Theoretical Investigation of Electronic and Structural Properties of AlN Thin Films |
Abstract
PDF (Rus)
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K. K. Abgaryan, D. I. Bazhanov, I. V. Mutigullin |
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| Vol 18, No 1 (2015) |
Problems of Reliability of Electronic Components |
Abstract
PDF (Rus)
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V. A. Kharchenko |
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| Vol 18, No 1 (2015) |
Trends in the Development of the Epitaxial Nitride Compounds Technology |
Abstract
PDF (Rus)
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A. A. Arendarenko, V. A. Oreshkin, Yu. N. Sveshnikov, I. N. Tsyplenkov |
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