In this review we present information about obtaining and properties of carbon nanomaterials (graphite oxide, graphene oxide, the reduced graphene oxide), which are used as electrodes for supercapacitors (SC). This review describes methods of obtaining graphite oxide, followed by separation of a graphene oxide and reducing graphene oxide by thermal, photochemical and chemical methods. Information of composition and concentration of functional groups in the graphene oxide and the elemental composition are described in detail. Results of the analysis of physical, electrochemical, thermal and optical properties of the graphene oxide and its derivatives are showen. The ratio of oxygen−containing functional groups was estimated by XPS. The presence of a partial surface’s reducing is found. Hydrogen−containing functional groups are characterized by IR spectroscopy. Method of estimating the size of graphene crystallites by Raman spectroscopy is shown. The mass loss upon heating is analyzed by thermogravimetry. The gassing of graphene oxide at thermal and photochemical reduction is studied by mass spectrometry. The difference between aforecited (abovementioned) methods of reduction is clearly demonstrated by vary in the composition of the evolved gases. Also the chemical method of graphene oxide reduction with (by using of) hydrazine is described. 

Review considers the literature data which illustrate the most interesting, from the authors’ point of view, aspects of that field of research. 

Calcium molybdate enriched with the isotope 100Мо (40Ca100MoO4) is a promising material for use in cryogenic scintillation detectors. The main requirements for working crystalline elements of the detector are absence of color and the value of attenuation coefficient (μ) at the wavelength of 520 nm is not higher than 0.01 cm–1. Single crystals 40Ca100MoO4 and 40Ca100MoO4 : Nb5+ are investigated. The influence of isothermal annealing on the attenuation spectra in the wavelength range 350 to 700 nm is studied. The broad absorption band with a maximum at λ = 460 nm is observed at the attenuation spectra of such samples. 

The dichroism phenomenon, which is associated with anisotropy of color centers in the crystals, is found along directions perpendicular to the optical axis. The annealing of the enriched samples at temperature 1250 °C in an atmosphere of O2 leads to the substantial reduction of intensity of the band near the wavelength 460 nm. 

The attenuation coefficient of the crystals 40Ca100MoO4 : Nb5+ meets the requirements is μ << 0.01 cm–1 to λ = 520 nm. Both the absorption band and dichroism are not observed in the area of 460 nm. 

Microhardness of single crystals La3Ga5SiO14, La3Ta0.5Ga5.5O14, Ca3TaGa3Si2O14 family of lantanum gallium silicate of trigonal symmetry class of 32 space group P321 has been researched by Knoop method. Anisotropy of microhardness determined by the ability to bring the material under the indenter, which determines the value of microhardness on different planes and in different crystallographic directions in the plane. The technique of measuring the microhardness by Knupp method for semi−automatic hardness tester Tukon 2100B for single crystals of langasite family. Anisotropy of the I group of microhardness (microhardness polar dependence on indentor position relatively crystallography directions in the plane of measurement) on the crystallography planes (112−0), (011−0), (0001) has been founded. 

Anisotropy of microhardness in fragile crystals of langasite family determined by the possibility of mass transfer under the indenter due to the movement of interstitial atoms and vacancies of oxygen and gallium. Measurements have shown that microhardness on all investigated planes of CTGS single crystals, as base, and the prismatic lower than the respective planes of LGS and LGT single crystals; wherein in CTGS single crystals there is no anisotropy of microhardness microhardness as I, and II type. Polar dependence of the mechanical properties of langasite and langatate single crystals should be taken into account in the surface treatment technology and manufacturing techniques of piezo− and acoustoelements. 

Currently, the world production of permanent magnets is about 150 tonnes. Year, the share of ceramic magnets of hexagonal barium ferrite represents more than 90 %.
Barium hexaferrite have a hexagonal magnetoplumbite type crystal structure with a large crystal magnetic anisotropy constant, which allows fine−grained structure of the material having a high coercive force. 

The combination of barium and strontium hexaferrites high coercivity with high residual induction produces magnets satisfactory for a large number of applications of specific magnetic energy, and the availability and low cost of raw materials, low cost production of ferrite magnets can produce tens of thousands of tons per year and meet about 75 % of the world market of permanent magnets. 

Upon receipt of a standard isotropic hexaferrite ceramic technology during pressing because scaly particles hexaferrite presszagotovkah occurs in texture, resulting in poor magnetic properties of the sintered ferrite. 

In the present work we investigated the possibility of barium hexaferrite brand 7BI215 with isotropic properties by using a short circuit process where compaction is not exposed hexaferrite particles and the particles of the charge, having a shape close to spherical. 

The article examines the object−relational approach to the creation of a database, designed to provide informational support to the multiscale computational scheme of multilayer semiconductor nanostructures. The MSNS computational scheme developed earlier by our group uses hierarchic representation of computational data obtained by various computational modules. Each layer of MSNS is treated separately. In contrast to well−known materials databases, which serve for storing and retrieving of information on existing structures and its properties, the database described in this paper is the central unit of MSNS computational scheme. The database provides data interchange between various computational units. In this paper we describe the modern approach to material database design. More specifically, data storage relational model which applies to solving resource−intensive and different−scale problems is proposed. Object−relational scheduler architecture is used in our work. It allows high−speed data exchange between various computational units of MSNS computational scheme. We introduce simple and user−friendly interface allowing criteria−based data retrieving as well as creation of input files for computational modules. These approaches can be applied in various branches of science, including the aviation and space industry, in particular in control systems of engineering (materials science) data. 

A method of non−destructive contactless control of thickness of undoped autoepitaxial InAs layers on heavily−doped substrates by Fourier−transform infrared spectroscopy (FTIR) has been realized. The studied layers were grown by chloride−hydride epitaxy method in a vertical reactor. The thickness control method was based upon an analysis of interference patterns observed in infrared reflectance spectra. Recommendations on the choice of measurement spectral range optimal for the InAs structures have been made. The factors in consideration included minimal dispersion of the InAs refraction index, and specifics of the heavily−doped substrates’ reflectance. A good correlation between the results of the measurements and the data of metallographic analysis has been observed. 

The technique of synthesis and purification of trimethyl(phenyl)silane PhSiMe3, allowing to obtain the product with high yield. Individuality of the product was confirmed by elemental analysis for C, H, Si. IR, UV and 1H NMR–spectroscopic studies, defined its spectral characteristics. Complex thermal analysis and thermogravimetric defined thermoanalytical behavior effects of PhSiMe3 in an inert atmosphere. Tensimetric studies have shown that the compound has sufficient volatility and thermal stability for use as a precursor in the process of chemical vapor deposition (CVD). The composition and temperature limits of the possible crystalline phase complexes in equilibrium with the gas phase of different composition has been determed by method of thermodynamic modeling. Calculated CVD diagrams allow us to select the optimum conditions of film deposition. The possibility of using trimethyl(phenyl)silane in CVD processes for producing dielectric films of hydrogenated silicon carbide has been demonstrated. 

Single−side heating of a wafer with a free surface by pulse laser annealing has been analyzed within a quasi-static uncoupled thermal elasticity problem. An analytical relationship has been obtained that can be used as a criterion of wafer thermal stability and helps determining nondestructive modes of pulse laser processing for dielectric and semiconductor wafers. A calculation model has been obtained in the assumption of temperature-independent thermophysical, mechanical and optical properties of the materials. An experimental verification of the adequacy of the calculation model has shown quite a satisfactory agreement between the calculation and experimental data. 

Germanium is a relevant object for research into the influence of dislocations on electronic properties of impurities and conversely the influence of impurities on electronic states of dislocations owing to high structural perfection of germanium single crystals and the abundant data available on properties of impurities and defects. We present the results of studies of radiationless and radiation recombination (by the DLTS and photoluminescence (PL) methods, respectively) of charge carriers in deep levels of plastically deformed germanium single crystals doped with multicharge copper or gold impurities by the diffusion method. The recombination parameters (position of the energy levels in the forbidden gap, the value and activation energy of capture cross−section and ionization entropy) of Cu−2/−3 and Au−1/−2 ions determined by DLTS are independent of dislocation density and in good agreement with those in as−grown samples, which is explained by their position outside the Reed cylinders. The parameters of Cu−2 and Au−1 electron capture account for the dependence of the DLTS signal amplitude on filling pulse frequency. After copper doping the methods of transmission electron microscopy (TEM) revealed no precipitates between the dislocations. The intensity of radiation recombination on dislocations at 4.2 K is significantly reduced by copper doping and restored by heating the samples at temperatures above 500 °С as a result of copper diffusion from the bulk toward the dislocations. The specific features of the luminescence spectra of the heated copper−doped samples within the temperature range 200—400 °C are likely to be due to the reactions of the impurities accumulated near the dislocations on cooling the copper−doped samples. 

Solar radiation is practically inexhaustible and environmentally friendly source of energy. Solar panels are classified as devices very sensitive to radiation. Therefore, the problem of creating radiation− resistant solar panels is quite acute. In operation, solar batteries (SB) are exposed to hard corpuscular radiation (radiation belts, solar and cosmic radiation), resulting in the structure of accumulated violations leading to a gradual deterioration of their electrical characteristics. Conducted experimental studies of single−degradation characteristics of solar cells (SE) based on GaAs with Ge substrate due to the structural damage produced by irradiation with fast neutrons and electrons, step by irradiation with fast neutrons and electrons with different fluence. Before and after each set of neutron fluence and electrons were measured light current−voltage characteristics (CVC) and photosensitivity spectra of the AOC. Determined from the measured CVC following parameters: fault current circuit voltage with a maximum coefficient of performance (COP) (ratio of maximum power to the product of the flux density of solar energy and the cell area), fill factor (the ratio of maximum power to the product of the short−circuit current and voltage idling). 

Potentiodynamic method at a rate of 2 mV/s−1 potential sweep the corrosion−electrochemical behavior of the alloy AK1M2 doped yttrium electrolyte NaCl in the medium with different concentrations. It is shown that the addition of yttrium reduce corrosion rate of the anode alloy AK1M2 source nearly doubled. Increasing the concentration of chloride ions promotes the corrosion rate of the anode, regardless of the yttrium content in the alloy AK1M2. At the same time, and pitting corrosion potentials are shifted in the negative region.