This paper is a review on total ionizing dose effects in silicon semiconductor devices and integrated circuits under low dose rate irradiation that is typical of space applications. We consider the mechanism of radiation induced charge buildup in the dielectric of MOS structures and at the semiconductor/dielectric interface; in addition, the paper reports an analysis of the nature of defects in Si/ SiO2 structure which are responsible for these processes. Also, the paper describes specific features of annealing of the charge trapped in dielectric and interface traps. The degradation of MOS and bipolar devices is considered for low dose rate irradiation conditions inherent to space application. We show that under low dose rate irradiation MOS devices are susceptible to time−dependent effects which are determined by the kinetics of charge buildup and annealing in the Si/SiO2 structure, while bipolar devices may be susceptible to true dose rate effects. The paper considers basic experimental modeling methods for low dose rate effects during accelerated testing of silicon devices and integrated circuits. We show that it is necessary to use essentially different experimental approaches for the modeling of time−dependent effects in MOS devices and true dose rate effects in bipolar devices and integrated circuits.

This article deals with regularities of defect structure and texture formation for extrusion of thermoelectric materials at different temperatures. The authors consider the influence of competition between deformation processes, return and recrystallization on the structure and properties of extruded materials. The experiment uses X–ray diffraction method, Harman’s method and the method of hydrostatic weighing for thermoelectric samples at different extrusion temperatures. The texture, physical properties and density of thermo electric materials change nonmonotonically depending on the extrusion temperature. The research allows establishing optimum extrusion temperature for thermoelectric materials achieving the greatest thermoelectric figure of merit. The research shows that the thermoelectric material has the best properties after extrusion at 400 °C.

In low−resistance p−type single−crystalline silicon to explored particularities of the behavior deformations features in condition, as joint action electric and temperature, so and apart electric current. Exists the small growing of resistivity p−Si with growing of the attached pressure. The dependence of the change of the electrical conductivity of p−Si on temperature during heating and cooling, both in terms of compression and without it. In condition of the joint action of the temperature and electric current on single−crystalline is discovered increase the resistance on deformations, but in the event of action only electric current at compression single−crystalline is revealed growing of the increase plastic. Studied surface microstructure got deformed sample. They are offered possible physical explanations to observed phenomenas.

We used mathematical modeling to compare the stress and deformation in a Bi0.4Sb1.6Te3 solid solution base thermoelectric material for extrusion through different diameter dies. The results show that extrusion through a 20 mm diameter die produces a more inhomogeneous deformation compared with extrusion through a 30 mm diameter die. Extrusion through a die of a larger diameter produces a structure that is coarser but has a more homogeneous grain size distribution. The degree of preferential grain orientation is higher for extrusion through a larger diameter die. We found a change in the lattice parameter of the solid solution along the extruded rod, correlating with detect formation during extrusion. The concentration of vacancies is higher for extrusion through a smaller diameter die. This difference between the structures results from a more intense dynamic recrystallization for a smaller diameter die. Increasing the die diameter and lowering the extrusion temperature allow retaining the thermoelectric properties of the material due to a better texture.

This paper addresses the need to develop a methodology of choosing initial materials, architecture of heterostructures and their synthesis for specific types of microwave components taking into account the availability of domestic materials and technologies, locates. Moreover, extending the product range significantly increases the requirements to energy consumption, dimensions and weight, frequency range, noise, sizes of working temperatures and other characteristics of microwave components. Specific examples of amplifiers for various applications (wireless communication and location systems) show that the development of these devices requires modern methods of multilevel computer modeling implying various optimization techniques as well as wide use of proven technical solutions. This development results in the fabrication of a number of standard basic physical models of heterostructures which are based on the solution of optimization tasks, e.g. choice of initial material, substrate material, structure of layers, their sequences, thickness of layers, impurity contents in them, impurity distribution in layer thickness, etc. the totality of which allows achieving an acceptable level of mechanical stress and high electrophysical parameters in heterostructure. The availability of a set of source data in the form of a library of standard heterostructure models will significantly speed up the development of various microwave and optoelectronics components within the system of instrument and technological design, and improve the characteristics of the devices and their economic parameters.

Ni rods distributed in silicon dioxide matrix formed on silicon wafers have been characterized by means of scanning electron microscopy and X–ray absorption near edge structure (XANES) spec
troscopy. Ni rods have been obtained by electrochemical deposition of the metal onto a silicon dioxide matrix pores formed with the tracking technique. Latent tracks have been obtained by SiO2 film irradiation  with heavy gold ions at the Hahn–Meitner–Institute (Berlin, Germany). Scanning electron microscopy has established the peculiarities of pore filling with metal and the specificity of Ni rod formation and their morphology (surface and cleavages). High intensity synchrotron radiation of the Helmholtz Zentrum Berlin has been used in the ultrasoft X–ray range for electron energy structure studies of the Ni rods with the XANES technique. The specific phase composition of the surface layers has been investigated using Si, Ni and O atom local surrounding analysis performed based on synchrotron XANES technique data including the rod/matrix interface. Possible Ni silicide formation has been demonstrated for a certain rod array formation mode in which partial SiO2 matrix destruction occurs and the metal contacts with the silicon wafer. Natural oxidation specificity has also been studied for the Ni rod/SiO2 heterostructure surface.

60 years ago, in July, 1956, the USSR’s first industrial germanium single crystal was grown up by the Czochralski (CZ) method. The method of growing single crystals according to Czochralski is the most widespread one currently used for obtaining bulk single crystals. The high technical implementation level and the high extent of process automation make this method the most preferable one for the production of bulk single crystals, e.g. silicon, germanium, a number of oxide crystals and multicomponent compounds. This article offers a historical review of the emergence and distribution of this method from the time of his invention by Jan Czochralski in 1916 and up to now. It is noted that in foreseeable future the CZ method will remain the leading method of producing bulk single crystals for a wide range of materials in the industry and in scientific developments. The main stages of the development of this method in the USSR and in Russia are presented. Comparison between the levels of foreign and domestic developments in the field of equipment design and in the field of technology development is carried out. Current problems and the development prospects of the method are discussed. Russia currently has an increasing lag from the world–class industrial practice of growing single crystals for a number of important materials e.g. silicon, gallium arsenide, indium antimonite etc.. Scope of actions required from the state, professional community and development institutions are suggested.