The structure and electrical properties of (Fe_xO_y)₁₀ (ZnO)₉₀ ceramics (0 ≤ x ≤ 3; 1 ≤ y ≤ 4) synthesized in air by one− and two−stage method were studied. To dope ZnO, powders of FeO, α−Fe₂O₃, and Fe₃O₄ or a mixture (α−Fe₂O₃ + FeO) were used. On the basis of X−ray diffraction analysis, gamma−resonance spectroscopy and Raman spectroscopy, it was established that at fixed average iron concentrations of 1—3 at.% in ceramic samples, at least three phases are formed: solid solution Zn_1−δFe_δO with wurtzite structure and residual iron oxides Fe_xO_y, used as doping agents. Scanning electron microscopy and energy−dispersive X−ray analysis have shown that, in the studied ceramics, the grain sizes of the wurtzite phase decreased from several tens of micrometers using one−step synthesis to the submicron level for the case of two−step synthesis. It was found that the incorporation of iron into ZnO leads to a contraction of the crystal lattice in the wurtzite phase and the stronger, the higher the proportion of oxygen in the doping iron oxides FexOy. The study of the temperature dependences of the electrical resistivity have shown that deep donor centers with an activation energy of about 0.35 eV are formed in the wurtzite phase Zn_1−δFe_δO. The temperature dependences of the electrical resistivity in the undoped ZnO in the temperature range of 6—300 K and in the doped ceramics (Fe_xO_y)₁₀(ZnO)₉₀, obtained by the one−step synthesis method, at temperatures below 50 K, are characterized by a variable activation energy, which indicates a strong disordering of their structure.

Abstract. The process of short circuit current behaviour in crystals with low−temperature phase transitions Rochelle salt NaKC₄H₄O₆ • 4H₂O and triglycine sulfate (CH₂ • NH₂ • COOH)₃ • H₂SO₄ was studied. The investigations were carried out on samples of polar cuts without preliminary polarization with symmetrical indium conductive coatings. Short−circuit currents which persist for a rather long time were observed on all samples already at room temperature. The phenomenon of current decay with time was observed. The temperature dependences of short−circuit currents were obtained in the temperature range 17—45 °С for Rochelle salt, in the temperature range 17—110 °С for triglycine sulfate. Short−circuit currents are observed in these crystals both in the ferroelectric phase and in the paraphase. It is shown that in a ferroelectric phase, the total short−circuit current is determined by the competing processes — pyro−currents and currents of electrochemical decomposition. In the paraphase, the short−circuit currents are the currents of electrochemical self−decomposition. Based on the experimental results obtained in this work, it was shown that the flow of short−circuit currents through the samples of polar sections of crystals of Rochelle salt and triglycine sulfate is due to the presence of its own EMF resulting from electrochemical self−decomposition of the opposite surfaces of the polar sections of the samples in contact with conductive coatings due to anisotropy of these surfaces. A model of electrochemical self−decomposition in such crystals is proposed.

Abstract. The results of investigation of crystal structure, ion conductivity and local structure of solid solutions (ZrO2)1−x(Gd2O3)x and (ZrO2)1−x(Y2O3)x (x = 0.04, 0.08, 0.10, 0.12, 0.14). The crystals were grown by directional crystallization of the melt in a cold container. The phase composition of the crystals was studied by X−ray diffractometry and transmission electron microscopy. Transport characteristics were studied by impedance spectroscopy in the temperature range 400—900 °C. The local crystal structure was studied by optical spectroscopy. Eu3+ ions were used as a spectroscopic probe. The results of the study of the local structure of solid solutions of ZrO2—Y2O3 and ZrO2—Gd2O3 systems revealed the peculiarities of the formation of optical centers, which reflect the nature of the localization of oxygen vacancies in the crystal lattice depending on the stabilizing oxide concentration. It is established that the local crystal environment of Eu3+ Ions in solid solutions (ZrO2)1−x(Y2O3)x and (ZrO2)1−x(Gd2O3)x is determined by the stabilizing oxide concentration and practically does not depend on the type of stabilizing oxide (Y2O3 or Gd2O3). The maximum conductivity at 900 °C was observed in crystals containing 10 mol.% Gd2O3 and 8 mol.% Y2O3. These compositions correspond to the t′′−phase and are close to the boundary between the regions of the cubic and tetragonal phases. It was found that in the system ZrO2—Y2O3 stabilization of the highly symmetric phase occurs at a lower stabilizing oxide concentration than in the system ZrO2—Gd2O3. Analysis of the data obtained allows us to conclude that in this range of compositions the main influence on the concentration dependence of the ion conductivity has a phase composition, rather than the nature of the localization of oxygen vacancies in the crystal lattice.

Abstract. In this paper, the effect of Al3+ ions substitutions on the value of the effective magnetic anisotropy field НАeff and the degree of magnetic texture f of the anisotropic polycrystalline hexagonal barium and strontium ferrites were studied. The samples were obtained by the ceramic technology method and the texture was formed by pressing in a magnetic field. The sample preparation technology presented in detail. The batches of barium hexaferrites were synthesized with the concentration of Al3+ ions: 0.9; 1.4; 2.5 and 2.6 formula units while strontium hexaferrites had Al3+ concentration of 0.1 formula units. It has been shown that by this technology barium and strontium hexaferrites with high value of (in range of 19—35 kOe) and with f = 80—83% could be obtained. The achieved values of НАeff and f could be sufficient for the production of substrates for microstrip microwave devices in millimeter−wave region.
For the first time a raise in the degree of magnetic texture of polycrystalline barium hexaferrites with an increase of concentration of Al3+ ions were detected; a slight (5.5—5.8%) magnetic texture of isotropic strontium hexaferrites was also detected. The achieved results discussed in detail. For studied hexaferrites the mechanism of magnetic texture formation during the process of synthesis is proposed.

Abstract. The article discusses the calculation of the temperature regime in nanoscale AlAs/GaAs binary heterostructures. When modeling heat transfer in nanocomposites, it is important to take into account that heat dissipation in multilayer structures with layer sizes of the order of the mean free path of energy carriers (phonons and electrons) occurs not at the lattice, but at the layer boundaries (interfaces). In this regard, the use of classical numerical models based on the Fourier law is limited, because it gives significant errors. To obtain more accurate results, we used a model in which the heat distribution was assumed to be constant inside the layer, while the temperature was stepwise changed at the interfaces of the layers. A hybrid approach was used for the calculation: a finite−difference method with an implicit scheme for time approximation and a mesh−free model based on a set of radial basis functions for spatial approximation. The calculation of the parameters of the bases was carried out through the solution of the systems of linear algebraic equations. In this case, only weights of neuroelements were selected, and the centers and «widths» were fixed. As an approximator, a set of frequently used basic functions was considered. To increase the speed of calculations, the algorithm was parallelized. Calculation times were measured to estimate the performance gains using the parallel implementation of the method.

Abstract. In this paper are considers the effect of the microrelief, dislocation structure and other defects of the epitaxial layers of the source and drain regions of the nitride HEMT transistors on the parameters of the formed ohmic contacts. The studies were carried out directly on high−power microwave transistors made of GaN/AlGaN/GaN/SiC heterostructures. Ohmic burning contacts were formed using the compositions Ti—Al—Mo—Au and Ti—Al—Ni—Au. To estimation the structural features of the contact areas, the surface microrelief at the interface of the burned contact/AlGaN and the defects formed on its surface was studied. It is shown that the resistance of the source and drain regions is largely determined by the surface microstructure at the boundary. Experimentally shown is the formation of a conducting layer in AlGaN under the ohmic contacts. The possibility of the formation of a new type of structural defects with a high aspect ratio in the contact and active areas of the devices during the formation of ohmic burned contacts is demonstrated. It is shown that the appearance of high densities of such defects leads to an increase of the device leakage currents.