Ceramic and polymer based nanocomponents combine the properties of their constituents, e.g. flexibility, elasticity, polymer reprocessability, hardness typical of glass, wear resistance and high light refraction index. This helps improving many properties of the materials in comparison with the source components. Since recently researchers have been manifesting interest to the properties of complex composite compounds. This is primarily caused by the unique properties of their structures as compared with conventional materials having homogeneous composition. Secondly, this interest is caused by the fact that these compounds may prove to be much cheaper than homogeneous structures provided the physical properties of the composite in a preset range of parameters (temperature, applied field frequency etc.) are identical to those of the respective homogeneous materials. For example, polyvinyl idenfluoride (PVDF) type ferroelectric polymers and copolymers on its basis have found wide application for functional elements of various electromechanic devices in advanced electronics due to their relatively good piezoelectric and pyroelectric properties. The strong random polarization and the formation of polar non-centrosymmetric crystals provide for the high piezoelectric and pyroelectric activity in these crystals. Scanning probe microscopy has been used for study of ferroelectric nanocomposites having different compositions. The matrix specimen for study of local polarization switching at a nanoscale level was vinyl idenfluoride and trifluoroethylene P(VDF-TrFE) copolymer possessing sufficiently high crystallinity. The composite fillers were barium titanate BaTiO₃ and deuterized triglycinsulfate DTGS ferroelectric powders and zirconate-titanate lead barium BPZT ceramic powder. We show these materials to show good promise for use in memory cells.

The operation of the TiN/HfO₂/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I-V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfO_x phase (x < 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfO_x phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5–10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I-V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation.

Proposed the molecular-kinetic model of formation of layers from the gas phase, including complex kinetic scheme of stages and equations for calculations of the speeds of heterogeneous and homogeneous growth. The growth rate takes into account the stage of diffusion, adsorption and chemical reaction with the formation on the substrate and in a boundary layer of the main gas, by-products and clusters. Defined indicators of chemical, structural and topological irregularities, as the deviations of the basic characteristics of layers. The characteristics of silicone oxide layers are estimated using examples of deposition by oxidation of monosilane and tetraethoxysilane.

The focus of this work is on the algorithm of extraction of parameters of the memristor model from the experimentally obtained current-voltage characteristics. The problem of finding the initial guess for this algorithm based on current-voltage characteristic features is stated and solved by means of machine learning algorithms.

In this work, the simulation of the processes of diffusion of metal barrier ions into a low-k dielectric between two nearby copper lines was performed. Based on experimental data on the diffusion coefficient published in the scientific literature and calculations according to the mathematical model of the distribution of metal barrier ions in the dielectric, the time dependent breakdown of a porous low-k dielectric in the elements of very large-scale integrated circuits of the modern topological level was estimated. Additionally, the work obtained dependences of the dielectric breakdown time on the distance between two nearby copper lines along with dependence on the supply voltage of the line (the other line is grounded).

In this work, we studied the influence of the processes of plasma-chemical deposition of SiNx films on the electrical parameters of the dielectric/AlGaN/GaN structure. The effect of the composition of the formed films, the effect of additional surface treatment of heterostructures in nitrogen plasma prior to dielectric deposition, as well as the effect of the RF bias supply during this treatment on the C-V and I-V characteristics of the SiNx/AlGaN/GaN structures were analyzed. It was found that for films with a ratio of nitrogen and silicon concentrations of 60 % and 40 %, as well as with an increased oxygen content, a decrease in the value of a fixed positive charge in these structures is characteristic, but the appearance of current pulsations is observed on the I-V characteristics of the structures. It was revealed how the modes of the plasma chemistry process affect such parameters of oscillations as the period, amplitude, length of the section of the I-V characteristic, where oscillations are observed. A possible explanation of the reasons for the appearance of characteristic pulsations is proposed. It has been established that the additional action of nitrogen plasma on the surface of the heterostructure before the monosilane is introduced into the chamber leads to a change in the magnitude and sign of the fixed charge and to a decrease in the concentration of free carriers in the channel of a two-dimensional gas of SiNx/AlGaN/GaN heterostructures. It is shown experimentally how the technological features of the deposition and surface preparation processes can affect the electrical parameters of the formed heterostructures.

Modern technologies cannot do without the production of thin films of tin dioxide, which are most widely used mainly in three areas: as transparent electrodes, catalysts, and solid-state sensors of various gases. Their use as transparent electrodes is associated with a high transmittance of tin dioxide layers in the optical range, as well as with their low electrical resistivity. The effect of short-term exposure to plasma on the composition and structure of thin films of tin dioxide obtained from a solution of pentahydrate tin tetrachloride in 97% ethanol with different concentrations of tin ions is considered. A linear character of the dependence of the thickness of the tin dioxide SnO₂ films on the concentration of the solution and the number of deposited layers is revealed. A decrease in the electrical resistance of the films with an increase in the concentration of the initial solution and an increase in the number of layers was found. It is shown that the treatment of SnO₂ films with hydrogen plasma makes it possible to reduce their electrical resistance of the films without decreasing the transparency. Treatment with oxygen plasma reduces the transparency of the SnO₂ films, and the resistance of the films increases with an increase in the duration of such treatment.

When creating new materials designed to work in particularly harsh conditions, the task of giving them corrosion resistance arises, the practical solution of which is associated with the level of knowledge in the field of high-temperature oxidation of metals and alloys. When using conductive aluminum alloys for the manufacture of thin wire, for example, winding wire, etc., certain difficulties may arise due to their insufficient strength and a small number of bends before failure. The solution of many problems of modern technology is associated with the use of materials with high oxidation resistance. Therefore, the study of the interaction of oxygen with metals and alloys has become of great importance due to the recent widespread use in various fields of science and technology of new materials with special physical and chemical properties. In this series, a special place is given to the aluminum conductor alloy E-AlMgSi (Aldrey). In the literature there is no information about the heat resistance of these alloys doped with cadmium. The process of oxidation of alloys was studied in air under isothermal conditions by the thermogravimetric method with continuous fixation of the sample mass, for an hour at temperatures of 723, 773 and 823 K. On the basis of experimental data, kinetic curves of oxidation were constructed, as well as the dependences of the specific mass increase on the amount of cadmium in the E-AlMgSi alloy (Aldrey), time and temperature. Treatment of quadratic curves of oxidation of alloys at these temperatures is established that the oxidation of alloys obeys the hyperbolic function y = kxⁿ, where n varies from 1 to 4. lgk dependence of 1/T for alloy E-AlMgSi (Aldrey) cadmium shows that with increasing temperature and cadmium oxidation rate increases.