A kinetic model of the doping processes in molecular beam epitaxy is developed. The dopant incorporation into the growing crystal is assumed to occur via both blocking dopant atoms at the kink positions by the host atoms and atomic exchange between dopant adatoms and atoms of the topmost crystalline layer. The dopant surface segregation is treated as accumulation of dopant atoms in energetically favorable adsorption positions on the surface. Two segregation pathways are considered: climbing of dopant adatoms over moving steps and jumping of the dopants out of the topmost crystalline layer. It is shown that increasing supersaturation in the adlayer, e.g. with decreasing temperature or increasing growth rate, leads to more efficient blocking of the dopant atoms and, as a consequence, to the decreasing surface segregation. The supersaturation is partially reduced with appearance of 2D islands on the terraces and creation of kinks at the 2D island edges. This results in weaker growth rate and temperature dependences of the surface segregation ratio. Very strong (superexponential) dependence of the surface segregation ratio on the growth temperature is possible under the condition of the intensive jumping of the dopants out of the topmost crystalline layer. The reason is that the probability of «immurement» of the dopant atoms by the moving step depends exponentially on the jumping-out rate constant. The model reproduces experimentally observed segregation behavior of Sb on Si(100).

In one experiment, having the aperture of the beam, comparable with dimensions of the sample, we compared the real optical damage of the main transparent materials for CO2-lasers: BaF2, NaCl, KCl, KBr, RbI, AgCl, CsI, KРС-5, KPC-6, ZnSe, ZnS, GaAs и Ge. Experimentally and theoretically we compared the nonlinear losses in 13 crystals, when the radiation in the range of 107—4 × 108 W/сm2 passed through them. The «tail» of the impulse was practically completely absorbed by plasma of optical breakdown of air in TEA CO2-laser, but the «peak» — only partially — by «hot» disbalanced charge carriers in the crystal. The losses of laser radiation exponentially depend on band gap of material. he peculiarities of damage Ge single crystals by high power pulsed CO2-laser were investigated. For the first time windows from Ge (diameter — 420 mm) were elaborated, produced and tested. We looked into, how parameters of crystal lattice, admixtures and structure of point defects, which can be changed by influence X-ray irradiation and annealing, can influence on the process of laser volume pores generation in alkali halides. We revealed dependence of pore dimensions from influence conditions, parameters of high-power laser beam, energy of crystal lattice. We studied kinetics of thermal annealing for to diminish dimensions of this pores.

This research work is dedicated to research and development of luminescent properties of solid solutions (Y1-xYbx)3Al5O12 with laser excitation. The spectra of infrared luminescence excited by a laser beam with a wavelength of 0.94 microns. The analysis of the luminescence spectra obtained for solid solutions with different concentrations of ytterbium ions in the composition, and the dependences of the luminescence intensity of the activator composition. Found that in the concentration range of ytterbium ions in the (0.03 £ x £ 0.09), there is a significant increase in the intensity of the luminescence in the 1036 nm and reaches a maximum. With further increase in the concentration of ytterbium ions in the range (0.09 £ x £ 0.115), a decrease in the intensity of luminescence. Decrease in the intensity of luminescence caused by the action of migration and multipole interactions between the ions of ytterbium. And this is due to the fact that at higher concentrations, the probability of recombination energy between ytterbium ions and various quenching centers. Change in the concentration of ytterbium ions has also a strong influence on the kinetic characteristics of the infrared luminescence of solid solutions (Y1-xYbx)3Al5O12.

When the concentration of the activator to 0.03 mole fractions of the afterglow time constant (t) increases monotonically from 1040 μs to 1120 μs. With a further increase in the content of the activator in the solid solution, t decreases monotonically and the activator concentration of 0.15 mole fractions of 744 microseconds. Solid solutions (Y1-xYbx)3Al5O12 with maximum intensity infrared luminescence in the band 1036 mm damping constant of about 794 μs.

The process of repolarization of a LiTaO3 crystal by e−beam lithography was studied. The process of fabrication of ferroelectric domains with domain width of 1 μm was demonstrated. It was shown that in the 127° Y¢-cut of a ferroelectric LiTaO3 crystal the ferroelectric domains is formed at the angle of 37° the crystal surface and growth along polar axis Z from negative surface to positive surface Z.

A system for control of crystal growth process in the multizone thermal installation with an integrated mathematical model is developed. Experimental information on both temperature distribution and powers of the heating elements as well as calculation data about the form of crystallization front have been used as input information for the control system. Consecutive correction of controller setpoints of multizone thermal installation during crystal growth process based on calculated data is aiming at deviation reduction between crystal growth rate and container moving rate.

The analysis of the inertial mechanisms of separating photoexcited carriers in conventional silicon converters structure with charges pumps (SCSCP) is lead. Charges pumps represented local n+-areas in Si base of p-type of conductivity. The equivalent circuit of such converters like multyemitters bipolar transistor is proposed. The results of experimental investigations converters light current-voltage diagrams are presented. Technological aspects of SCSCP formation is regarded.

Porous silicon (por-Si) has a unique set of physic−chemical properties of characteristics — well-developed surface and consequently, a high sorption activity. In a dependence of the fabrication technique it is possible to form pores and clusters of nanometer size that makes this material rather prospective for elaborations in optoelectronics and sensors production. However, high surface activity stipulates porous silicon instability in the atmosphere. The work is concerned with the study of the influence of por-Si surface treatment in the aqueous solution of polyacrylic acid on the composition and photoluminescence of this material. It was found that this treatment can either enhance and stabilize PL of the material or change spectral position of PL band and also enhance its total intensity in a dependence of the fabrication technique.

ITO thin films were prepared by electron beam deposition method over a range of processing conditions. The target material used in this study was an ITO pellet with a composition: In2O3 90 wt% and SnO2 10 wt%. The evaporation conditions were: a vacuum of 5 × 10-4 or 4 × 10-2 Pa and the rate of evaporation were controlled within the range 0.075–0.4 nm/s. The thickness of thin film was controlled by using a quartz crystal thickness monitor, resulting in films having 200 nm. After the deposition, the samples were annealed in a thermal annealing furnace in air or nitrogen at 300-700 оC for 30 s. Experiments aimed at choosing the optimal atmosphere for annealing the films yielded the different results. Indium tin oxide coatings properties were researching as a function of the deposition atmosphere and conditions of a thermal annealing. The ITO films deposited and annealed under the optimized conditions work well as the transparent conducting electrode in the light emitting diodes based on GaN.

Structural changes of strontium hexaferrite powders after milling in water and toluene and after subsequent annealing were studied using X-ray diffraction, Scanning Electron Microscopy and Laser diffraction. Also magnetic properties changes were studied. The coarse-grain powder milling leads to an abrupt decrease of its particles size and the average crystallite size as well as an increase of SrFe12O19 phase lattice microstrains. Saturation magnetization and remanence decrease after milling in both media. At the same time coercive force of milled powders changes insignificantly with increasing milling time. The subsequent annealing allowed us to increase the magnetic properties of the powder. The annealed powders are characterized by the following magnetic properties: µ0Нci = 0,42¸0,49 T, µ 0Ir = 0,23¸0,24 T, (BH)max = 8-9,6 kJ/m3.

A model of radiative and nonradiative transitions in silicon quantum dots is presented that describes the temperature dependence of photoluminescence of ion-synthesized ensembles of Si nanocrystals in SiO2. The four−level scheme of transitions is considered taking into account thermally activated processes and exchange splitting of the ground state of excited exciton to triplet and singlet sublevels, transitions from which are responsible for the luminescence. The expression for temperature dependence of the monochromatic photoluminescence components that is in agreement with a number of analogous dependencies from literature is derived on the basis of solution of a system of kinetic equations. The obtained expression describes adequately experimental results of the given work and allows to determine the splitting value for the exciton state in dependence on the energy of emitted photons, i.e. the nanocrystal size.

Problems of optical monitoring of melt level and diameter of a crystal growing from high-temperature melt by Czochralski technique are considered. Investigations results performed in Institute of Automatics and Electrometry of the Siberian Branch of the Russian Academy of Science at vision system construction to control the automatic growth installations are presented. Such system consists of laser triangulation sensor used to measure the melt level in a crucible and also of digital vision system to control the diameter of growing crystal. Metrological problems important to control of crystal growth process caused by nonstationarity and variations of melt surface curvature and also by parallax of crystallization zone image formed by optical projection system are analyzed. Joint measurements of melt level andcrystal diameter are discussed allowing to eliminate a systematic measurement error caused by melt rotation.

The moving sensor on surface acoustic waves (SAW) in which moving are measured on a delay of the signal reflected from the platen, moving along a surface of SAW propagation is developed and made. Such sensor can work in a mode of reflection of an interrogating electromagnetic signal, i.e. to be passive and wireless. The maximum measured moving to such gage equally 14 mm with accuracy ±0,1mm.

Silicon carbide thin epilayers were grown on Si substrates by pulsed laser ablation of ceramic target. The influence of wafer temperature on morphological and structural properties of SiC layers was investigated by scanning electron microscopy, transmission electron microscopy and X-ray diffractometry.