The homogeneity limits of ZnTe were examined using direct physical−chemical technique in the temperature range 750—1455 K. It was demonstrated that surface oxidation in the room environment results in the distortion of the observed picture such that an excess of a component may appear with a negative sign. At the same time, in the case of non−oxidized ZnTe, it was demonstrated for the first time the stoichiometrical composition lies within the homogeneity limits. The maximum nonstoichiometries were found to be a 3.4 × 10-4 and 4.4 × 10-3 mole excess of a component per mole of ZnTe for Te at 1369 K and Zn at 1292 K, respectively. At T < 1200 K the solidus lines of both the Te- and Zn-rich boundaries demonstrated retrograde behavior. On the basis of the results obtained from X-ray diffraction and optical microscopy measurements performed on quenched samples, a T—x-projection including a wurtzite-sphalerite-like phase transformation was proposed for the Zn—Te-system.

The effectiveness of metrological control and consequently the credibility of test results directly depend on the level of certified reference material completeness in laboratory. In the sphere of single crystals optical parameters measurement the deficiency of state and manufactured certified reference materials takes place. Therefore, the development and application of certified reference materials of organization are reasonable and effective. The experience of development and application of organization certified reference materials designed for control of stability and guaranteeing of measurement traceability in the testing laboratory «Single crystals and stocks on their base» of National University of Science and Technology «MISIS» is considered.

The possibility of obtaining Mn—Zn-ferrite 2000 NM on the short process flow, which differs from the usual lack of diffusion operations roasting and grinding. It is shown that the use of the basic composition in sintering processes develop secondary recrystallization and zonal isolation, leading to the formation of highly inhomogeneous microstructure obtained with low values of the magnetic permeability. A homogeneous microstructure characteristic recrystallization, managed by doping copper oxide and zinc. By doping CuO permeability far from the desired value, but its temperature coefficient is small. By doping ZnO reached the desired value of magnetic permeability, but dramatically increases its temperature coefficient.The optimum combination of the magnetic parameters obtained in complex copper oxides doped ferrite and zinc.

The electro-physical and photoelectrical properties of MIS structures based on HgCdTe MBE with non-uniform distribution of composition were experimentally investigated. It is shown that near-surface graded-gap layers with elevated composition strongly affect on dependencies of the capacitance and the photo-emf versus the bias voltage and frequency for the MIS structures based on n-Hg1-xCdxTe (x = 0.21—0.23). The characteristics of MIS structures based on n-Hg0.7Cd0.3Te with periodically located regions with high composition were investigated and it is shown that these regions are most strongly affect the characteristics of MIS structures when their location near the boundary of the insulator−semiconductor. The electrical properties of MIS structures based on n-Hg1-xCdxTe (x = 0.62—0.73) with region with lower composition were experimentally studied.

In present work the influence of growth conditions on structural quality of AlN layers grown by МОСVD have been investigated. The influence of buffer layers grown with different temperatures and V/III ratio on crystalline quality of AlN were explored. We have reported that the high temperature buffer layer with low V/III ratio is most efficient way to improve the structural quality of AlN. Further improvement was achieved by minimizing the parasitic reactions between NH3 and TMAl. It was carried out by optimization the total flow through the reactor. Applying these methods, it was possible to obtain a high-quality AlN layers (FWHM for (0002), (0004) and (101–3) reflections were 50, 97 and 202 arc seconds respectively) with good root-mean-square roughness of surface 0.7 nm.

Samples of polyacrylonitrile (PAN) films and cobalt-containing PAN films have been fabricated by method of not coherent IR-radiation. It is constructed QSPR model, allowing to relate values of resistance of PAN films and Co-containing PAN films with parameters of technological process of formation of gas-sensing materials based on them. It is established that resistance of the obtained materials depends on temperature and time of the second stage of IR-pyrolize and on dopant concentration.

The influence of the epitaxial layer features and so silicon-sapphire interface in SOS-structures on capacitance parameters of MIS-structures formed on SOS with submicron silicon layers were investigated in this article. Both standard SOS-structures with 0.3 μk silicon n-type layer and analog SOS-structures with the blastic silicon layer amorphizated by the oxygen ion implantation with following high-temperature annealing. The two different types of test MIS-structures with 30 nm gate oxide, polysilicon gate and metallic contacts were fabricated. The strong difference in the capacitance characteristics for standard SOS and SOS with recrystallization silicon layer was disclosed in depletion region. It was revealed the strong frequency dependence of capacitance characteristics for the test MIS-structures formed on almost all SOS-structures. It was shown that the character of the test structures C—V-curves were defined by dimension and configuration of the silicon layer as well as the deep compensate levels concentration in layer near silicon-sapphire interface. Particularly it was shown that big changes of the frequency-capacitance dependences at transition from the tests formed on standard SOS to tests on SOS with blastic silicon layer were determined by great concentration of deep compensate centers in layer near interface for standard SOS. It was shown that the recrystallization of silicon layer by oxygen ion implantation may lead to appearance of the centers, formed donor levels into silicon band gap and appearance of the frequency-capacitance dependences in depletion region of such SOS-structures.

The work is dedicated to obtaining nickel metal-carbon nanocomposites, based on IR-pyrolyzed polyacrylonitrile and nickel chloride hexahydrate, and the study of the structural characteristics of the synthesized material. Nanocomposites prepared under IR-based precursor pyrolysis of polyacrylonitrile (PAN) and nickel chloride hexahydrate (NiCl2 • 6H2O). Pyrolysis was carried out in the temperature range 150—700 °C. The grown nanocomposites are two-phase system of the carbon matrix formed during carbonization of PAN, and distributed in the nanoparticles of nickel (nickel oxide). The average size of the nanoparticles in the nanocomposite was 15—25 nm. The effect of temperature pyrolysis process IR precursor in the size of nickel nanoparticles obtained. It was determined that the distribution of nickel nanoparticles in size is defined by the temperature of the synthesis of the nanocomposite. So while the temperature increases prevailing average particle size of the metal increases and the distribution is blured and shifts toward larger sizes. By a calculation of the total Gibbs energy of possible reduction reactions of nickel chloride and oxide pyrolysis products PAN the possibility of formation of nanocomposites comprising nickel oxide nanoparticles, which are at a higher temperature infrared heating (more than 5000 °C) can be reducted up to zero-valent state at more higher temperature IR heatig.

The results of structural and morphological investigations of methylsilsesquioxane finely divided particles synthesized by hydrolytical co-condensation of methyltrichlorosilane and tetrachlorous silicon alcocksilined «in situ» are presented. The silica-type hydrophobe particles were obtained using above mentioned method with the result of 98.7—99.4 % (mass) compared to load. These particles were identified as crystalline formations with lattice period of 5.5—8.0 nm and inter-planery distance 0.92—1.04 nm in near order. It is shown that in contrast to well-known crystalline methylsilsesquioxanes introduction of chemically bonded SiO4/2 fragments in material structure leads to formation of 2—3 micrometer-size spherical particles from primarily existed 10—15 nm particles; these namely particles are responsible for spherical surface morphology. The method of extraction of siloxane nano-particles (2.5—280 nm) from products of reaction was described; the behavior of particles in suspension was studied and particle dimensional parameters were determined with the help of helium−neon 0.6328 nm laser correlation spectroscopy.

The defects in silicon based multilayer epitaxial structures intended for power epitaxial-diffusion devices as initial material were studied by x-ray topography techniques. It was shown the dislocation nets with non-uniform distribution of dislocations both over thickness and layer square in the form of dense rows (dislocation walls) or slip bands were principal defects in initial epitaxial layers and have influenced on electrical characteristics of power devices.

At present special importance attaches monitoring methods to measure the parameters of film structures directly during their formation — in situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in situ X-ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.