Разработаны процессы химического осаждения из газовой фазы (CVD) металлических и диэлектрических (high−k и low−k) пленок с применением нетрадиционных исходных веществ (летучих комплексных и элементоорганических соединений). Проведено комплексное исследование химического и фазового состава, структуры пленок двойных оксидов (HfO2)1−x(Ме2O3)x(где Ме = Al, Sc), а также пленок карбонитридов и оксикарбони-тридов кремния. Показано, что полученные материалы обладают комплексом уникальных функциональных свойств, что делает их перспективными для применения в микро−, нано− и оптоэлектронных устройствах.

Investigation on the properties of large [100]−oriented InSb single crystals grown by Czoсhralski method The properties of undoped and heavily Te doped large single crystals of InSb grown by Czochralski method in the [100] direction and intended for use in IR photodetectors of new generation were studied. It was found that the non−uniformity in undoped crystals does not exceed 10—16%. The average dislocation density in this ingots was 7  101 cm−2 and their distribution along the diameter of (100)−oriented wafers was much more uniform than for the (211)−oriented wafers. We also studied the microstructure of heavily Te doped InSb crystals. It was established that the dislocation density in these crystals was below 1  102 cm−2. Te doping producing the electron concentration higher than 1,5 ⋅ 1018 cm−3 gave rise to the formation of high density of precipitates. The optical transmission of the samples with electron concentration ~6,9  ⋅ 1017 cm−3 was found to de higher 40 % for the wavelength range of 3—5 µm

Destruction of the thermoelectric material on the basis of bismuth telluride under high temperatures, which prevents the use of these materials for a direct conversion of thermal energy into electrical energy, are revealed. Mechanisms of the occurring process are proposed. It is shown that the industrial technology of spark cutting leads to appearance of the damaged layer, which facilitates the penetration of solder into the volume of the thermoelectric material in subsequent soldering of thermoelements.

Lanthanum−Gallium Tantalate is regarded as a perspective material for active elements of lasers. In this regard, the study of luminescent properties of these crystals are actual. In this paper, results of the first obtained luminescent properties of LGT crystals grown in different atmospheres are provided. A significant effect of the growth atmosphere on luminescent characteristics of LGT crystals is revealed.

In this work, an Atomic Force Microscope in the so−called Piezoresponse mode and Kelvin mode is used to image the grains, ferroelectric domains and surface potential in lithium niobate thin films. A RF magnetron sputter system was used to deposit LiNbO3 thin films on (100)−oriented Si substrates with SiO2 layer. Using the electric field from a biased conducting AFM tip, we show that possible to form and subsequently to visualize ferroelectric state. Also, we report surface charge retention on ferroelectric thin films by Kelvin probe microscope in comparison with the piezoresponse signal.

Two−phase influence on microstructure and property of ferrite of different purpose was investigated. It is shown that fine dispersed component doped at the second step (milling) effectively brakes growth of grains, promoting reception of dense, homogeneous, fine−grained ferrite materials. Thus such properties as initial magnetic permeability, mechanical strength essentially raise and magnetic losses decrease. Change of modes of baking allows to receive coarse−grained homogeneous materials.Influence of two−phase synthesis on a microstructure and property nickel−zinc, manganese−zinc, lithium−titanic ferrite spinels is more below considered discussed.

In the work an approach to modeling the influence of mechanical stresses generated in a silicon matrix by an oxygen precipitate (SiO2) on the rates of the main processes determining the precipitation kinetics. The time dependences of the sizes of a spherical precipitate and the number of oxygen atoms inside it has been obtained and analyzed with the stress factor taken into account. 

For this purpose the opportunities of perfect layer formation during RTA have been analyzed in dislocation−free silicon wafers. The RTA application is based on an opportunity of effective influence on a distribution of oxygen precipitate density on wafer thickness by means of control of vacancies and interstitial atoms distributions. However the decision of this important task is connected with an oc-currence of large local wafer stresses concentrated near fastening supports and a significant bend of large diameter Si wafers. Therefore in this project the mathematical modeling of three−dimension strain state and defect formation in large diameter Si wafer were investigated: the various ways of wafer fastening were analyzed and the opportunities of stresses reduction in Si wafers were determined. For the description of RTA defect formation the mathematical model taking into account of diffusion−recombination processes of vacancies and interstitial Si atoms, and also formation of vacancy clusters have been applied. On the basis of this model the time thermal RTA parameters were determinated: heating mode, hold time at the maximal temperature and cooling rate of wafer. They provide a formation of required perfect layer near wafer surface contained the corresponding vacancy concentration and cluster density on wafer thickness. The calculated results have been verified by authors of this project on test samples investigated by Light Microscopy (LM) and Transmission Electron Microscopy (TEM). Detailed LM and TEM researches of microdefect distributions and morphology have been carried out for the experimental Si wafers subjected to various RTA modes and multistage heat treatment in Belarusian plant «Integral». 

Singularities of liquid−phase laying process of polymeric nanocomposite thick film covering on any substrates has been discussed. Host interaction mechanisms of polymeric nanocomposite solutions on substrate surface have been compared on the basis of scaling. Experimental data and practical recommendations for successful processing behavior of different composite liquid−phase film laying on solid state substartes have been reported. 

Temperature dependance of the resistivity of carbon−silicon 1 mkm film containing nanocise tungsten particles were investigated. Resistivity measurements were carried out by contact method in the temperature range 20—200 °С for films with resistivity at room temperature of about 0,03—15 Ohm  cm. Decreasing of the resistivity with temperature was observed. An activation and a tunnel mechanisms of conductivity were proposed. Tunnel fraction growths with tungsten content from 40 to 80% coincident with decrease of activation energy from 0,1 to 0,06 eV.

The structural features of a nanocomposite FeNi3/C synthesized from a solution FeCl3•6H2O/NiCl2•6H2O/polyacrylonitrile (PAN)/dimethyl formamide (DMF) with CFe=CNi=5; 10; 20; 25 mas. % under an IR heating are studied by a combination scattering (CS), a scanning electron microscopy (SEM), and an X−ray phase analyses (XPA). It is determined that as the IR heating temperature grows from 500 to 700 °С, the FeNi3 nanoparticle size increases from about 15 to 60 nm; amorphous, microcrystalline, and nanocrystalline graphite−like carbon phases (the halo in the XPA spectrum at 2θ ≈ 8÷32°) that are characterized by more intensive band D (ν =1340÷1358 cm−1) than the band G (ν =1560÷1596 cm−1) in the CS spectrum are formed; from the data of a SEM and a CS (the G peak, ν =1596 см−1), the possibility of the graphene structure generation is suggested at 600 and 700  °С; the peak in the area of 1120 cm−1 and the high intensity of the CS spectrum in the region of 1430—1480 cm−1 reveal the formation of polymer−destruction intermediate products at the interface of nanoparticles FeNi3. 

Processes of heat transfer through interfaces of semiconductor diode stack structures of high voltage pulse switchers are investigated by laser thermal wave methods. Theoretical model of thermal wave propagation in such structures is developed. It takes into account specific features of preparation of semiconductor element surfaces, layers of solder or bonding. It is shown that laser thermal wave methods can be applied to diagnostics of thermal contact quality between elements of opening switchers for various technologies of their assembling.