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| Issue |
Title |
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| Vol 27, No 4 (2024) |
Modified mass-in-mass chain |
Abstract
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V. O. Turin, I. V. Nazritsky, D. D. Kireev, P. A. Andreev, Yu. V. Ilyushina |
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| Vol 27, No 4 (2024) |
Increasing the durability of electronic components in the inductive power supply system of implantable medical devices |
Abstract
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K. O. Gurov |
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| Vol 27, No 4 (2024) |
Quantum chemical modeling of the surface modification of an “armchair” carbon nanotube with cobalt oxide |
Abstract
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A. R. El Zanin, S. V. Boroznin |
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| Vol 27, No 4 (2024) |
A non-stationary model of mass transfer in a self-consistent electrical field for determining the influence of temperature on electrophysical properties of metal oxide memristors |
Abstract
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A. N. Busygin, B. H. Gabdulin, S. Yu. Udovichenko, N. A. Shulaev, A. D. Pisarev, A. H. A. Ebrahim |
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| Vol 27, No 2 (2024) |
Simulation of MHD-influence on silicon melt flow in Czochralski process |
Abstract
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N. A. Verezub, A. I. Prostomolotov |
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| Vol 27, No 2 (2024) |
Modeling the functioning of semiconductor devices taking into account defects in the atomic structure |
Abstract
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I. K. Gainullin |
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| Vol 27, No 2 (2024) |
Fault-tolerant self-timed counters |
Abstract
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A. A. Zatsarinnyy, Yu. A. Stepchenkov, Yu. G. Diachenko, D. V. Khilko, G. A. Orlov, D. Yu. Diachenko |
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| Vol 27, No 2 (2024) |
Problems of synthesis of connectionist representations and continuum models of the environs on the example of memristors |
Abstract
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I. V. Matyushkin |
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| Vol 26, No 4 (2023) |
Simulation of the radio absorbing properties of pyrolyzed polyacrylonitrile in the frequency range from 3 to 50 GHz |
Abstract
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D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova, V. G. Kosushkin |
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| Vol 26, No 4 (2023) |
Method for calculating a thermal expansion induced mechanical stress in three-dimensional solid-state structures using mathematical modeling |
Abstract
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K. A. Ivanov, E. V. Kaevitser, A. A. Zolotarev |
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| Vol 26, No 3 (2023) |
Quantum mechanical simulation of polarization switching in HfO2 crystals |
Abstract
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A. A. Zhuravlev, K. K. Abgaryan, D. L. Reviznikov |
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| Vol 26, No 4 (2023) |
Activation processes during operation of an Ag/SnSe/Ge2Se3/W ion memristor with a self-directed current-conducting channel |
Abstract
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A. N. Aleshin, O. A. Ruban |
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| Vol 26, No 3 (2023) |
Fundamentally new approaches to solving thermophysical problems in the field of nanoelectronics |
Abstract
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V. I. Khvesyuk, A. A. Barinov, B. Liu, W. Qiao |
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| Vol 25, No 4 (2022) |
Accounting for heat release in small volumes of matter on the example of the growth of ZnO micro-rods: search for a modeling technique |
Abstract
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I. V. Matyushkin, O. A. Telminov, A. N. Mikhaylov |
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| Vol 25, No 4 (2022) |
Mathematical modeling of the metrical parameters of hexagonal close-packed metalls |
Abstract
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P. A. Sechenykh |
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| Vol 25, No 4 (2022) |
Fault-tolerant selt-timed circuits |
Abstract
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A. A. Zatsarinny, Yu. A. Stepchenkov, Yu. G. Diachenko, Yu. V. Rogdestvenski, L. P. Plekhanov |
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| Vol 25, No 4 (2022) |
Protein folding quantum circuit quantum circuit for bio material modelling compression |
Abstract
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M. O. Lisnchenko, S. I. Protasov |
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| Vol 25, No 4 (2022) |
Simulation modeling of an analog impulse neural network based on a memristor crossbar using parallel computing technologies |
Abstract
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A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov |
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| Vol 24, No 4 (2021) |
Calculation of the Kapitza resistance at the silicon - alpha–quartz interface for various temperatures |
Abstract
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K. K. Abgaryan, I. S. Kolbin |
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| Vol 24, No 4 (2021) |
Mathematical modeling of the perovskite and double perovskite crystal structures |
Abstract
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P. A. Sechenykh |
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| Vol 24, No 4 (2021) |
The study of nickel impurity segregation on LSNT perovskite open surfaces by means of ab initio molecular dynamics |
Abstract
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A. A. Chistyakova, D. I. Bazhanov |
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| Vol 24, No 4 (2021) |
Accounting of the porosity of the material in the simulation of the time-dependent dielectric breakdown in the metallization system of integrated circuits |
Abstract
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A. A. Orlov, E. A. Ganykina, A. A. Rezvanov |
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| Vol 24, No 4 (2021) |
Analysis and comparison of different approaches to the extraction of parameters of the memristor model |
Abstract
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E. S. Shamin, E. S. Gornev |
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| Vol 24, No 4 (2021) |
Temperature studies of Hall field sensors based on nanosized silicon-on-insulator heterostructures |
Abstract
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K. K. Abgaryan, A. V. Leonov, D. L. Reviznikov |
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| Vol 24, No 4 (2021) |
Evaluation of the effect of FinFET structure parameters on electrical characteristics using TCAD modeling tools |
Abstract
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K. O. Petrosyants, D. S. Silkin, D. A. Popov |
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