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| Issue |
Title |
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| Vol 27, No 4 (2024) |
Directional crystallization of Ge1-xSix solid solutions |
Abstract
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V. G. Kosushkin, S. I. Supelnyak, E. N. Korobeinikova, V. I. Strelov |
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| Vol 27, No 4 (2024) |
Formation of an antireflective structure on the surface of single-crystal silicon by accelerated Xe ions |
Abstract
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M. V. Zorina, M. S. Mikhailenko, A. E. Pestov, A. A. Perekalov, N. I. Chkhalo |
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| Vol 26, No 3 (2023) |
Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs |
Abstract
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A. G. Belov, V. E. Kanevskii, E. I. Kladova, S. N. Knyazev, N. Yu. Komarovskiy, I. B. Parfent’eva, E. V. Chernyshova |
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| Vol 26, No 2 (2023) |
Impact of nanosecond UV laser pulses on the surface of germanium single crystals |
Abstract
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V. Yu. Zheleznov, T. V. Malinsky, V. E. Rogalin, Yu. V. Khomich, V. A. Yamshchikov, I. A. Kaplunov, A. I. Ivanova |
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| Vol 26, No 2 (2023) |
Influence of technological parameters during multiwire cutting of GaAs ingots on the surface characteristics of the plates |
Abstract
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D. A. Podgorny, M. S. Nestyurkin, N. Yu. Komarovskiy |
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| Vol 26, No 1 (2023) |
Cadmium telluride for high-efficiency solar cells |
Abstract
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I. I. Maronchuk, D. D. Sanikovich, E. V. Davydova, N. Yu. Tabachkova |
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| Vol 25, No 3 (2022) |
Preparation and study of nanodispersed powders of thermoelectric materials |
Abstract
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M. Yu. Shtern |
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| Vol 25, No 2 (2022) |
Determination of stoichiometry deviation in wide-band II-VI semiconductors on the basis of equilibrium vapor phase composition |
Abstract
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S. P. Kobeleva |
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| Vol 25, No 1 (2022) |
The modern phase of the polysilicon market |
Abstract
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A. V. Naumov, D. L. Orehov |
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| Vol 24, No 3 (2021) |
Comparison between optical and electrophysical data on free electron concentration in n-InAs samples |
Abstract
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T. G. Yugova, A. G. Belov, V. E. Kanevskii, E. I. Kladova, S. N. Knyazev, I. B. Parfent'eva |
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| Vol 24, No 1 (2021) |
Comparison of the results of optical and electrophysical measurements of free electron density in n-GaAs samples doped with tellurium |
Abstract
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T. G. Yugova, A. G. Belov, V. E. Kanevskii, E. I. Kladova, S. N. Knyazev |
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| Vol 23, No 3 (2020) |
Photonic and terahertz applications as a next driver of gallium arsenide market |
Abstract
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N. A. Kulchitskiy, A. V. Naumov, V. V. Startsev |
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| Vol 22, No 3 (2019) |
Opportunity to use inert gas flow for control of qualitative characteristics of the grown silicon single crystals |
Abstract
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T. V. Kritskaya, V. N. Zhuravlev, V. S. Berdnikov |
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| Vol 22, No 1 (2019) |
On the relationship of proton irradiation and heat treatment of monocrystalline silicon with its structure |
Abstract
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V. E. Asadchikov, I. G. Dyachkova, D. A. Zolotov, Yu. S. Krivonosov, V. T. Bublik, A. I. Shikhov |
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| Vol 20, No 2 (2017) |
The development of the market and the production technology of polycrystalline silicon |
Abstract
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V. V. Mitin, A. A. Kokh |
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| Vol 19, No 1 (2016) |
INFLUENCE OF EXTRUSION TEMPERATURE ON THE FORMATION OF P–TYPE CONDUCTIVITY BI0.5SB1.5TE3 STRUCTURE |
Abstract
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I. V. Tarasova, V. T. Bublik |
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| Vol 20, No 1 (2017) |
STUDY OF PLASTIC FORMING IN PRODUCTION OF THERMOELECTRIC BISMUTH TELLURIDE BASED MATERIAL |
Abstract
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D. I. Bogomolov, V. T. Bublik, N. A. Verezub, A. I. Prostomolotov, N. Yu. Tabachkova |
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| Vol 19, No 3 (2016) |
GaAs single crystals market: development trends |
Abstract
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E. P. Majanov, S. N. Kniazev, A. V. Naumov |
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| Vol 19, No 3 (2016) |
Obtaining a copper selenide base material by powder metallurgy methods |
Abstract
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A. A. Ivanov, V. B. Osvenskii, A. I. Sorokin, V. P. Panchenko, L. P. Bulat, R. Kh. Akchurin |
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| Vol 18, No 4 (2015) |
FEATURES OF CZ GROWTH OF THE LARGE SIZE LOW DISLOCATION GERMANIUM CRYSTALS |
Abstract
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O. M. Alimov, K. E. Anoshin, A. V. Naumov |
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| Vol 20, No 3 (2017) |
Monolike ingot growth by directional solidification of Solar Grade silicon |
Abstract
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A. A. Betekbaev, B. N. Mukashev, L. Pelissier, P. Lay, G. Fortin, L. Bounaa, D. M. Skakov, D. A. Kalygulov, A. A. Pavlov, T. S. Turmagambetov, V. V. Lee |
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| Vol 19, No 4 (2016) |
Deep tellurium purification for electronic and photonic materials |
Abstract
PDF (Rus)
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M. B. Grishechkin, E. N. Mozhevitina, A. V. Khomyakov, M. P. Zykova, R. I. Avetisov, I. Ch. Avetissov |
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| Vol 18, No 3 (2015) |
FEATURES OF SILICON DOPING BY THE THERMOMIGRATION METHOD |
Abstract
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V. N. Lozovsky, L. S. Lunin, B M. Seredin |
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| Vol 18, No 3 (2015) |
DEVELOPMENT OF CLEARING TECHNIQUE OF METALLURGICAL SILICON TO SOLAR GRADE SILICON |
Abstract
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I. I. Maronchuk, I. E. Maronchuk, D. D. Sanikovich, I. B. Shirokov |
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| Vol 19, No 2 (2016) |
Investigation of the phase diagram of the Zn—Se—Fe ternary system for laser application |
Abstract
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M. P. Zykova, V. Yu. Krolevetskaya, E. N. Mozhevitina, E. M. Gavrishchuk, I. Сh. Avetissov |
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