EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
| Issue | Title | |
| Vol 26, No 3 (2023) | Modeling the processes of formation of defects that form deep levels in SiON/AlGaN/GaN | Abstract PDF (Rus) |
| K. L. Еnisherlova, I. A. Mikhaylov, L. A. Seidman, E. P. Kirilenko, Yu. V. Kolkovsky | ||
| Vol 25, No 3 (2022) | Effect of treatment in nitrogen plasma on the electrical parameters of AlGaN/GaN heterostructures | Abstract PDF (Rus) |
| K. L. Еnisherlova, L. A. Seidman, S. Yu. Bogolyubova | ||
| Vol 24, No 2 (2021) | Influence of PECVD features of SiNx deposition processes on electrical parameters of SiNx/AlGaN/GaN structures | Abstract PDF (Rus) |
| K. L. Еnisherlova, L. A. Seidman, E. T. Temper, Yu. A. Kontsevoy | ||
| Vol 20, No 4 (2017) | Dislocation structure of the AlGaN/GaN/α-Al2O3 heterostructures epitaxial layers at doping GaN with С and Fe | Abstract |
| T. F. Rusak, K. L. Enisherlova, A. V. Lutzau, V. V. Saraykin, V. I. Korneev | ||
| Vol 23, No 2 (2020) | Stresses modeling in multilayer semiconductor structures of automobile regulators and predicting the reliability of their operation | Abstract PDF (Rus) |
| S. A. Adarchin, V. G. Kosushki, V. M. Gurin, L. V. Kozhitov, M. S. Vasyutin, V. G. Bybenin | ||
| Vol 23, No 2 (2020) | Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD | Abstract PDF (Rus) |
| A. A. Sleptsova, S. V. Chernykh, D. A. Podgorny, I. A. Zhilnikov | ||
| Vol 22, No 3 (2019) | ALD Al2O3, SiNx, and SiON films as passivating coatings in AlGaN/GaN HEMT | Abstract PDF (Rus) |
| K. L. Enisherlova, E. M. Temper, Yu. V. Kolkovsky, B. K. Medvedev, S. A. Kapilin | ||
| Vol 21, No 2 (2018) | Measurement of the field of effective magnetic anisotropy and linewidth of ferromagnetic resonance at FMR frequency in magnetically-uniaxial hexagonal ferrites | Abstract PDF (Rus) |
| A. S. Semenov, A. G. Nalogin, S. V. Shcherbakov, A. V. Myasnikov, I. M. Isaev, V. G. Kostishyn, N. E. Adiatulina, A. A. Alekseev, E. A. Belokon, M. P. Mezentseva | ||
| Vol 21, No 1 (2018) | The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures | Abstract PDF (Rus) |
| V. V. Paramonov, O. V. Novikova, V. G. Kosushkin | ||
| Vol 20, No 1 (2017) | MULTILAYERED PERIODICAL STRUCTURES WITH ELASTICALLY STRAINED GESISN LAYERS AND GESISN NANOISLANDS | Abstract PDF (Rus) |
| V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, A. A. Bloshkin, V. I. Mashanov, S. A. Teys, I. D. Loshkarev, N. A. Baidakova | ||
| Vol 19, No 3 (2016) | Nanoscale characterization of Cr, Cu, Al and Ni metallic magnetron nanofilm multilayers on sitall | Abstract PDF (Rus) |
| A. P. Kuzmenko, Naw Dint, A. E. Kuzko, Myo Min Than, Thant Sin Win, A. I. Kolpakov | ||
| No 4 (2014) | Porous Silicon Based High Efficiency Photoelectrodes | Abstract PDF (Rus) |
| K. B. Tynyshtykbayev, V. B. Glazman, D. Muratov, B. Rakhmetov, N. S. Tokmoldin, S. Zh. Tokmoldin | ||
| Vol 18, No 2 (2015) | Investigation of the Passivation Layers Influence on Capacitance Characteristics of AlGaN/GaN Heterostructures | Abstract PDF (Rus) |
| K. L. Enisherlova, V. G. Goryachev, T. F. Rusak, S. A. Kapilin | ||
| Vol 18, No 2 (2015) | Control of Yellow Photoluminescence in AlGaN/GaN Heterostructures | Abstract PDF (Rus) |
| N. B. Gladysheva, V. V. Gruzdov, M. E. Gusev, Yu. V. Kolkovskii, Yu. A. Kontsevoi, E. F. Pevtsov | ||
| No 3 (2014) | Determination of Indium Arsenide Autoepitaxial Layer Thickness by Fourier–Transform Infrared Spectroscopy | Abstract PDF (Rus) |
| O. S. Komkov, D. D. Firsov, E. A. Kovalishina, A. S. Petrov | ||
| No 3 (2014) | Trimethyl(phenyl)silane — a Precursor for Gas Phase Processes of SiCx : H Film Deposition: Synthesis and Characterization | Abstract PDF (Rus) |
| E. N. Ermakova, S. V. Sysoev, L. D. Nikulina, I. P. Tsyrendorzhieva, V. I. Rakhlin, M. L. Kosinova, F. A. Kuznetsov | ||
| No 2 (2014) | Processes During Annealing of Ti—Al—Ni and Ti—Al—Ni—Au Contact Metallization Systems | Abstract PDF (Rus) |
| K. D. Vanyukhin, R. V. Zakharchenko, N. I. Kargin, M. V. Pashkov, L. A. Seidman | ||
| No 4 (2013) | DEGRADATION OF THREE–JUNCTION AMORPHOUS SI : H BASED SOLAR CELLS | Abstract PDF (Rus) |
| V. N. Murashev, S. A. Legotin, A. A. Krasnov, A. A. Dudkin, D. A. Zezin | ||
| No 4 (2013) | STATISTICAL ANALYSIS OF GE INFLUENCE ON RADIATION AND THERMAL STABILITY OF THE ELECTROPHYSICAL CHARACTERISTICS OF CZ–SI BASED DEVICE N—P—N—P–STRUCTURES |
Abstract PDF (Rus) |
| S. V. Bytkin, T. V. Kritskaya, S. P. Kobeleva | ||
| No 4 (2013) | EFFECTS OF THE FORMATION METHOD OF EARLY GAP BUFFER MONOLAYERS ON THE STRAIN STATE OF GAAS FILMS ON VICINAL SI(001) SUBSTRATES | Abstract PDF (Rus) |
| I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, A. S. Ilin, M. A. Putyato, B. R. Semyagyn, V. V. Preobrazhensky | ||
| No 2 (2013) | SOLAR CELLS WITH THE CHARGE PUMPING: THEORETICAL PERSPECTIVES AND TECHNOLOGICAL ASPECTS OF THE APPLICATION | Abstract PDF (Rus) |
| V. A. Gusev, V. V. Starkov, A. V. Tetersky | ||
| No 2 (2012) | ANALYSIS OF HEAT PROPAGATION PROCESSES IN STRUCTERS OF PULSE POWERFUL DEVICES NEAR PLANES OF SOLDER OF SILICON PLATES IN HIGH VOLTAGE STACKS | Abstract PDF (Rus) |
| A. L. Glazov, V. A. Kozlov, O. Korolkov, K. L. Muratikov | ||
| No 1 (2012) | NEW DIRECTIONS IN THE DEVELOPMENT OF ULTRAVIOLET LIGHT–EMITTING DIODE TECHNOLOGY | Abstract PDF (Rus) |
| A. A. Antipov, I. S. Barash, V. T. Bublik, S. Yu. Kurin, Yu. N. Makarov, E. N. Mokhov, S. S. Nagalyuk, A. D. Roenkov, T. Yu. Chemekova, K. D. Scherbachev, H. Helava | ||
| No 3 (2013) | PHOTOCONVERTERS IN SOLAR SPLITTING SYSTEM | Abstract PDF (Rus) |
| S. Yu. Kurin, V. D. Doronin, A. A. Antipov, B. P. Papchenko, H. Helava, M. I. Voronova, A. S. Usikov, Yu. N. Makarov, K. V. Eidel’man | ||
| No 3 (2013) | RESEARCH OF POSSIBILITIES FOR IMPROVING THE ENERGY AND MASS PARAMETERS OF SOLAR CELLS USING PLASMA-CHEMICAL ETCHING | Abstract PDF (Rus) |
| P. B. Lagov, A. S. Drenin, E. S. Rogovskii, A. M. Lednev | ||
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